收藏本站
SiR846ADP
Vishay Siliconix
N-Channel 100 V (D-S) MOSFET
PRODUCT SUMMARY
V DS (V) R DS(on) ( ? ) Max.
0.0078 at V GS = 10 V
I D (A) a
60
Q g (Typ.)
FEATURES
? TrenchFET ? Power MOSFET
? 100 % R g and UIS Tested
? Material categorization:
100
0.0085 at V GS = 7.5 V
0.0095 at V GS = 6 V
60
60
26.7 nC
For definitions of compliance please see
www.vishay.com/doc?99912
PowerPAK ? SO-8
APPLICATIONS
? Primary Side Switch
6.15 mm
1
S
S
5.15 mm
? Isolated DC/DC Converters
? Full Bridge
D
2
3
S
4
G
8
D
7
D
6
D
D
G
5
Bottom View
Ordering Information:
SiR846ADP-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (T A = 25 °C, unless otherwise noted)
S
N-Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
Symbol
V DS
V GS
Limit
100
± 20
60 a
Unit
V
Continuous Drain Current (T J = 150 °C)
T C = 70 °C
T A = 25 °C
I D
58.6
18.6 b, c
Pulsed Drain Current (t = 100 μs)
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
T A = 70 °C
T C = 25 °C
T A = 25 °C
L = ? 0.1 mH
I DM
I S
I AS
E AS
14.7 b, c
200
60 a
4.9 b, c
40
80
A
mJ
T C = 25 °C
83
Maximum Power Dissipation
T C = 70 °C
T A = 25 °C
P D
53
5.4 b, c
W
T A = 70 °C
3.4 b, c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) d, e
T J , T stg
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient b, f
Maximum Junction-to-Case (Drain)
t ? 10 s
Steady State
R thJA
R thJC
18
1
23
1.5
°C/W
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile ( www.vishay.com/doc?73257 ). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 65 °C/W.
Document Number: 63823
S13-0829-Rev. B, 22-Apr-13
For technical support, please contact: pmostechsupport@vishay.com
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
SIR850DP-T1-GE3 MOSFET N-CH 25V 30A PPAK 8SOIC
SIR862DP-T1-GE3 MOSFET N-CH 25V 8-SOIC
SIR878ADP-T1-GE3 MOSFET N-CH 100V 40A POWERPAK
SIR878DP-T1-GE3 MOSFET N-CH 100V 8-SOIC
SIR888DP-T1-GE3 MOSFET N-CH 25V 40A PPAK 8SOIC
SIR890DP-T1-GE3 MOSFET N-CH 20V 50A PPAK 8SOIC
SIR892DP-T1-GE3 MOSFET N-CH 25V 50A PPAK 8SOIC
SIR928-6C-F LED IR SIDE GAA1AS WATER CLR AXL
相关代理商/技术参数
SIR846DP 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 100-V (D-S) MOSFET
SIR846DP-T1-GE3 功能描述:MOSFET 100V 60A 104W 7.8mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SIR850DP 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 25-V (D-S) MOSFET
SIR850DP-T1-GE3 功能描述:MOSFET 25V 30A 41.7W 7.0mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SIR852160-WJ 制造商:CELDUC 制造商全称:celduc-relais 功能描述:New Solid State Relay compact size pitch 22,5mm with spring terminals
SIR862DP 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 25-V (D-S) MOSFET
SIR862DP-T1-GE3 功能描述:MOSFET N-CH 25V 8-SOIC RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:TrenchFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
SIR864DP 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 30 V (D-S) MOSFET